Биполярный транзистор TTC017 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TTC017
Маркировка: C017
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 12 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 14 pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: NEW-PW-MOLD
TTC017 Datasheet (PDF)
ttc017.pdf
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TTC017Bipolar Transistors Silicon NPN Epitaxial TypeTTC017TTC017TTC017TTC0171. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 180 to 450 (IC = 0.5 A)(2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A)(3) High-speed
ttc011b.pdf
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TTC011B NPNTTC011BTTC011BTTC011BTTC011B1. 1. 1. 1. 2. 2. 2. 2. (1) : VCEO = 230 V ()(2) : Cob = 20 pF ()(3)
ttc011.pdf
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TTC011Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC011TTC011TTC011TTC0111. Applications1. Applications1. Applications1. Applications High-Voltage Switching LCD Backlighting2. Features2. Features2. Features2. Features(1) High collector breakdown voltage: VCEO = 230 V(2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A)3. Packaging and Interna
ttc012.pdf
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TTC012Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC012TTC012TTC012TTC0121. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High speed switching : tf = 0.15 s (typ.) (IC = 0.5 A)(2) High collec
ttc015b.pdf
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TTC015BBipolar Transistors Silicon NPN Epitaxial TypeTTC015BTTC015BTTC015BTTC015B1. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 100 to 200 (IC = 0.5 A)(2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A)(3
ttc014.pdf
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TTC014Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC014TTC014TTC014TTC0141. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A)(2) High collector
ttc013.pdf
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TTC013Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC013TTC013TTC013TTC0131. Applications1. Applications1. Applications1. Applications High-Voltage Switching LCD Backlighting2. Features2. Features2. Features2. Features(1) High collector breakdown voltage: VCEO = 350 V(2) High DC current gain: hFE = 100 to 200 (IC = 50 mA)3. Packaging and Interna
ttc016.pdf
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TTC016Bipolar Transistors Silicon NPN Epitaxial TypeTTC016TTC016TTC016TTC0161. Applications1. Applications1. Applications1. Applications High-Speed Switching DC-DC Converters2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 400 to 1000 (IC = 0.5 A)(2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 3
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