TPV597 - Даташиты. Аналоги. Основные параметры

HG RF POWER TRANSISTOR TPV597 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 1.0 W Pref @ 58 dB IMD 20 V VCC High Gain 11 d

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV598/D The RF Line UHF Linear Power Transistor TPV598 Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV596A/D The RF Line UHF Linear Power Transistor TPV596A . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470 860 MHz)

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV596A/D The RF Line UHF Linear Power Transistor TPV596A . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470 860 MHz)

HG RF POWER TRANSISTOR TPV598 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC High Gain 7.0 dB Min

HG RF POWER TRANSISTOR TPV591 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The HG TPV591 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. FEATURES INCLUDE Gold Metalization Emitter Ballasting MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3 W @ TC = 25 OC O TJ -

HG RF POWER TRANSISTOR TPV593 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The HGTPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. FEATURES INCLUDE Gold Metalization Emitter Ballasting High Gain MAXIMUM RATINGS IC 1.2 A VCB 45 V PDISS 17