HG RF POWER TRANSISTORTPV597SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Goldmetallized dice and diffused emitter ballast resistors are used to enhancereliability, ruggedness and linearity. Band IV and V (470860 MHz) 1.0 W Pref @ 58 dB IMD 20 V VCC High Gain 11 d

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV597/DThe RF LineUHF Linear Power TransistorTPV597. . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Goldmetallized dice and diffused emitter ballast resistors are used to enhancereliability, ruggedness and linearity. Band IV and V (470860 MHz) 1.0 W Pref @ 58 dB IMD 20 V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV598/DThe RF LineUHF Linear Power TransistorTPV598Designed for 4.0 watt stages in Band V TV transposer amplifiers. Goldmetallized dice and diffused emitter ballast resistors are used to enhancereliability, ruggedness and linearity. Band IV and V (470860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV596A/DThe RF LineUHF Linear Power TransistorTPV596A. . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and500 mW Band V TV transposer stages. Gold metallization and diffused emitterballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470860 MHz)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV596A/DThe RF LineUHF Linear Power TransistorTPV596A. . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and500 mW Band V TV transposer stages. Gold metallization and diffused emitterballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470860 MHz)

HG RF POWER TRANSISTORTPV598SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 4.0 watt stages in Band V TV transposer amplifiers. Goldmetallized dice and diffused emitter ballast resistors are used to enhancereliability, ruggedness and linearity. Band IV and V (470860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC High Gain 7.0 dB Min

HG RF POWER TRANSISTORTPV591SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .280 4L STUDThe HG TPV591 is a CommonEmitter Device Designed for HighLinearity Class A Television Band IVand V Transmitters.FEATURES INCLUDE: Gold Metalization Emitter BallastingMAXIMUM RATINGSIC 300 mAVCB 45 VPDISS 5.3 W @ TC = 25 OCOTJ -

HG RF POWER TRANSISTORTPV593SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .280 4L STUDThe HGTPV593 is a CommonEmitter Device Designed for Class AHigh Linearity Television Band IV andV Transmitter Applications.FEATURES INCLUDE: Gold Metalization Emitter Ballasting High GainMAXIMUM RATINGSIC 1.2 AVCB 45 VPDISS 17

TPV595SILICON NPN MICROWAVE POWER TRANSISTOR14 W, in the 470 860 MHz Range ________________________________________________The silicon n-p-n transistor is designed for ClassAB Push Pull, Common Emitter from 470 to 860 MHzApplications.Features: Power Gain: 8.5 dB Min Output Power: 14 W IMD3: -47 dB MaxAbsolute Maximum RatingsParameters Sym Value UnitCollector