Справочник транзисторов. NSVT30010MXV6T1G

 

Биполярный транзистор NSVT30010MXV6T1G Даташит. Аналоги


   Наименование производителя: NSVT30010MXV6T1G
   Маркировка: UU
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 420
   Корпус транзистора: SOT563
 

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NSVT30010MXV6T1G Datasheet (PDF)

 0.1. Size:172K  onsemi
nst30010mxv6t1g nsvt30010mxv6t1g.pdfpdf_icon

NSVT30010MXV6T1G

NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a

 0.2. Size:102K  onsemi
nsvt30010mxv6t1g.pdfpdf_icon

NSVT30010MXV6T1G

NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a

 9.1. Size:55K  onsemi
nsvt3904dp6t5g.pdfpdf_icon

NSVT30010MXV6T1G

NST3904DP6T5GDual General PurposeTransistorThe NST3904DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat

 9.2. Size:67K  onsemi
nsvt3946dp6t5g.pdfpdf_icon

NSVT30010MXV6T1G

NST3946DP6T5GDual ComplementaryGeneral Purpose TransistorThe NST3946DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi

Другие транзисторы... NXP3875Y , NZT44H8 , NZT45H8 , N0501S , NJD1718T4G , NJD2873T4G , NJD35N04G , NS2029M3T5G , 2SD2499 , NSVT3904DP6T5G , NSVT3904DXV6T1G , NSVT3946DP6T5G , NSVT3946DXV6T1G , NSVT45010MW6T1G , NSVT45010MW6T3G , NSVT45011MW6T3G , NSVT489AMT1G .

History: KSC5034 | TA1763A | CHFMG8GP | T2589 | TPT5609-C | CHT589GP | TIS06

 

 
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