Биполярный транзистор NSVT45010MW6T1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: NSVT45010MW6T1G
Маркировка: 4F
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.38 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 220
Корпус транзистора: SOT363
Аналоги (замена) для NSVT45010MW6T1G
NSVT45010MW6T1G Datasheet (PDF)
nsvt45010mw6t1g.pdf
NST45010MW6T1GDual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagehttp://onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifi
nsvt45010mw6t3g.pdf
NST45010MW6T1GDual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagehttp://onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifi
nst45011mw6t1g nsvt45011mw6t3g.pdf
NST45011MW6T1G,NSVT45011MW6T3GDual Matched GeneralPurpose TransistorNPN Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT-363 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense an
nsvt45011mw6t3g.pdf
NST45011MW6T1G,NSVT45011MW6T3GDual Matched GeneralPurpose TransistorNPN Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT-363 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense an
Другие транзисторы... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050