Биполярный транзистор NSVT45010MW6T3G Даташит. Аналоги
Наименование производителя: NSVT45010MW6T3G
Маркировка: 4F
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.38 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 220
Корпус транзистора: SOT363
Аналог (замена) для NSVT45010MW6T3G
NSVT45010MW6T3G Datasheet (PDF)
nsvt45010mw6t3g.pdf

NST45010MW6T1GDual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagehttp://onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifi
nsvt45010mw6t1g.pdf

NST45010MW6T1GDual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagehttp://onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifi
nst45011mw6t1g nsvt45011mw6t3g.pdf

NST45011MW6T1G,NSVT45011MW6T3GDual Matched GeneralPurpose TransistorNPN Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT-363 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense an
nsvt45011mw6t3g.pdf

NST45011MW6T1G,NSVT45011MW6T3GDual Matched GeneralPurpose TransistorNPN Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT-363 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense an
Другие транзисторы... NJD35N04G , NS2029M3T5G , NSVT30010MXV6T1G , NSVT3904DP6T5G , NSVT3904DXV6T1G , NSVT3946DP6T5G , NSVT3946DXV6T1G , NSVT45010MW6T1G , D209L , NSVT45011MW6T3G , NSVT489AMT1G , NSVT65010MW6T1G , NSVT65011MW6T1G , NJL0281DG , NJL0302DG , NJL1302DG , NJL3281DG .
History: 2SC4226-R25 | 2SD780DW3 | TIP36BF | 2SA1615-Z | 2SD77AH | 2SA1593S-E
History: 2SC4226-R25 | 2SD780DW3 | TIP36BF | 2SA1615-Z | 2SD77AH | 2SA1593S-E



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