Биполярный транзистор NSVT489AMT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: NSVT489AMT1G
Маркировка: N2
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.54 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 15 pf
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: SOT457
Аналоги (замена) для NSVT489AMT1G
NSVT489AMT1G Datasheet (PDF)
nst489amt1g nsvt489amt1g.pdf
NST489AMT1G,NSVT489AMT1GHigh Current Surface MountNPN Silicon Low VCE(sat)Switching Transistor forwww.onsemi.comLoad Management in30 VOLTS, 3.0 AMPSPortable ApplicationsNPN TRANSISTORFeatures NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable TSOP-6CASE 318G These Devices a
nsvt489amt1g.pdf
NST489AMT1,NSVT489AMT1GHigh Current Surface MountNPN Silicon Low VCE(sat)Switching Transistor forhttp://onsemi.comLoad Management in30 VOLTS, 3.0 AMPSPortable ApplicationsNPN TRANSISTORFeatures AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications RequiringTSOP-6Unique Site and Control Change RequirementsCASE 318G Pb-Free P
nsvt45010mw6t3g.pdf
NST45010MW6T1GDual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagehttp://onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifi
nst45011mw6t1g nsvt45011mw6t3g.pdf
NST45011MW6T1G,NSVT45011MW6T3GDual Matched GeneralPurpose TransistorNPN Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT-363 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense an
nsvt45010mw6t1g.pdf
NST45010MW6T1GDual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagehttp://onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifi
nsvt45011mw6t3g.pdf
NST45011MW6T1G,NSVT45011MW6T3GDual Matched GeneralPurpose TransistorNPN Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT-363 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense an
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: ST2SB9435U
History: ST2SB9435U
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050