Справочник транзисторов. NSV1C300ET4G

 

Биполярный транзистор NSV1C300ET4G Даташит. Аналоги


   Наименование производителя: NSV1C300ET4G
   Маркировка: 1C30E
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 33 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 60 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: TO252
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NSV1C300ET4G Datasheet (PDF)

 ..1. Size:79K  onsemi
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NSV1C300ET4G

NSS1C300ET4G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedwww.onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important.Typical

 7.1. Size:286K  onsemi
nsv1c301ct.pdfpdf_icon

NSV1C300ET4G

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 7.2. Size:114K  onsemi
nsv1c301et4g.pdfpdf_icon

NSV1C300ET4G

NSS1C301ET4G100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherehttp://onsemi.comaffordable efficient energy control is important.Typi

 9.1. Size:109K  onsemi
nsv1c200mz4t1g.pdfpdf_icon

NSV1C300ET4G

NSS1C200MZ4,NSV1C200MZ4100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SB1127S | DDTD123EC | BFR81 | 2SAR523M

 

 
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