NSV2029M3T5G - аналоги и даташиты биполярного транзистора

 

NSV2029M3T5G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NSV2029M3T5G
   Маркировка: 9F
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.265 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.15 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Ёмкость коллекторного перехода (Cc): 3.5 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT723

 Аналоги (замена) для NSV2029M3T5G

 

NSV2029M3T5G Datasheet (PDF)

 ..1. Size:55K  onsemi
nsv2029m3t5g.pdfpdf_icon

NSV2029M3T5G

NS2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board www.onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typical)

 8.1. Size:126K  onsemi
nsv20200lt1g.pdfpdf_icon

NSV2029M3T5G

NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable

 8.2. Size:119K  onsemi
nsv20201lt1g.pdfpdf_icon

NSV2029M3T5G

NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) T

 8.3. Size:189K  onsemi
nss20201lt1g nsv20201lt1g.pdfpdf_icon

NSV2029M3T5G

NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) TRAN

Другие транзисторы... NSV1C200MZ4T1G , NSV1C201LT1G , NSV1C201MZ4T1G , NSV1C300ET4G , NSV1C301ET4G , NSV20101JT1G , NSV20200LT1G , NSV20201LT1G , TIP120 , NJV4030PT1G , NJV4030PT3G , NJV4031NT1G , NJV4031NT3G , NJVBUB323ZT4G , NJVMJB41CT4G , NJVMJB42CT4G , NJVMJB44H11T4G .

History: CHDTC124TKGP | ASY55N | DNLS160V | BU361 | 2SA813

 

 
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