NSV2029M3T5G - Даташиты. Аналоги. Основные параметры
Наименование производителя: NSV2029M3T5G
Маркировка: 9F
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.265 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 140 MHz
Ёмкость коллекторного перехода (Cc): 3.5 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT723
Аналоги (замена) для NSV2029M3T5G
NSV2029M3T5G Datasheet (PDF)
nsv2029m3t5g.pdf
NS2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board www.onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typical)
nsv20200lt1g.pdf
NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable
nsv20201lt1g.pdf
NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) T
nss20201lt1g nsv20201lt1g.pdf
NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) TRAN
Другие транзисторы... NSV1C200MZ4T1G , NSV1C201LT1G , NSV1C201MZ4T1G , NSV1C300ET4G , NSV1C301ET4G , NSV20101JT1G , NSV20200LT1G , NSV20201LT1G , TIP120 , NJV4030PT1G , NJV4030PT3G , NJV4031NT1G , NJV4031NT3G , NJVBUB323ZT4G , NJVMJB41CT4G , NJVMJB42CT4G , NJVMJB44H11T4G .
History: CHDTC124TKGP | ASY55N | DNLS160V | BU361 | 2SA813
History: CHDTC124TKGP | ASY55N | DNLS160V | BU361 | 2SA813
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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