Биполярный транзистор 2N678B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N678B
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 90 W
Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 100 °C
Граничная частота коэффициента передачи тока (ft): 0.2 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO3
2N678B Datasheet (PDF)
2n6788 irff120.pdf
PD - 90426CIRFF120REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788HEXFETTRANSISTORS JANTXV2N6788THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF120 100V 0.30 6.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin
2n6782 irff110.pdf
PD - 90423CIRFF110REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782HEXFETTRANSISTORS JANTXV2N6782THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF110 100V .60 3.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing
2n6786u.pdf
PD - 91782IRFE310REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786UHEXFET TRANSISTOR JANTXV2N6786U[REF:MIL-PRF-19500/556]N - CHANNEL 400Volt, 3.6, HEXFETProduct SummaryThe leadless chip carrier (LCC) package representsPart Number BVDSS RDS(on) IDthe logical next step in the continual evolution ofIRFE310 400V 3.6 1.25Asurface mount technology. T
2n6786 irff310.pdf
PD - 90425CIRFF310REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786HEXFETTRANSISTORS JANTXV2N6786THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF310 400V 3.6 1.25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin
2n6784 irff210.pdf
PD - 90424CIRFF210REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784HEXFETTRANSISTORS JANTXV2N6784THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF210 200V 1.5 2.25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin
2n6782.pdf
2N6782MECHANICAL DATADimensions in mm (inches)NCHANNEL 8.89 (0.35)9.40 (0.37)7.75 (0.305)POWER MOSFET8.51 (0.335)4.19 (0.165)4.95 (0.195)0.89max.(0.035)12.70(0.500)APPLICATIONS7.75 (0.305)min.8.51 (0.335)dia. FAST SWITCHING MOTOR CONTROLS5.08 (0.200)typ. POWER SUPPLIES2.542(0.100)1 30.66 (0.026)1.14 (0.045)0.71 (0.028)
2n6788l.pdf
2N6788LDimensions in mm (inches). N-Channel MOSFET 8.64 (0.34)9.40 (0.37)8.01 (0.315) in a 9.01 (0.355)Hermetically sealed TO39 4.06 (0.16)4.57 (0.18)Metal Package. 0.89 max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia.N-Channel MOSFET. 5.08 (0.200)typ.VDSS = 100V 2.54ID = 4.5A 2(0.100)1 30.74 (0.029)RDS(ON) = 0.3
2n6788lcc4.pdf
2N6788LCC4IRFE120MECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFETENHANCEMENT MODE9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 16FEATURES1.39 (0.055)1.02 (0.040)11 17 AVALANCHE ENERGY RATING10 187.62 (0.300)7.12 (0.280)9 1 SIMPLE DRIVE REQUIREMENTS0.76 (0.030)8 20.51 (0.020) HERMETICALLY SE
2n6786.pdf
2N6786Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34)9.40 (0.37)8.01 (0.315) in a 9.01 (0.355)Hermetically sealed TO39 4.06 (0.16)4.57 (0.18)Metal Package. 0.89 max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia.N-Channel MOSFET. 5.08 (0.200)typ.VDSS = 400V 2.54ID = 1.25A 2(0.100)1 30.74 (0.029)RDS(ON) = 3.6
2n6784u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS 2N6784 2N6784U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C u
2n6782u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS JAN 2N6782 2N6782UJANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag
2n6788u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value UnitDrain Source Voltage VDS
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050