Справочник транзисторов. NJW21193G

 

Биполярный транзистор NJW21193G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NJW21193G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 200 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 16 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Ёмкость коллекторного перехода (Cc): 500 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO3P

 Аналоги (замена) для NJW21193G

 

 

NJW21193G Datasheet (PDF)

 ..1. Size:117K  onsemi
njw21193g njw21194g.pdf

NJW21193G NJW21193G

NJW21193G (PNP)NJW21194G (NPN)Silicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current GainCOMPLEMENTARY SILICON Excellent Gain Linearit

 ..2. Size:203K  inchange semiconductor
njw21193g.pdf

NJW21193G NJW21193G

isc Silicon PNP Power Transistor NJW21193GDESCRIPTIONLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 0.1. Size:121K  onsemi
njw21193g-94g.pdf

NJW21193G NJW21193G

NJW21193G (PNP)NJW21194G (NPN)Silicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current GainCOMPLEMENTARY SILICON Excellent Gain Linearit

 6.1. Size:90K  onsemi
njw21193 njw21194.pdf

NJW21193G NJW21193G

NJW21193G (PNP)NJW21194G (NPN)Preferred DevicesSilicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE

 7.1. Size:217K  inchange semiconductor
njw21194g.pdf

NJW21193G NJW21193G

isc Silicon NPN Power Transistor NJW21194GDESCRIPTIONLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

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