NSS40200LT1G - аналоги и даташиты биполярного транзистора

 

NSS40200LT1G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NSS40200LT1G
   Маркировка: VA
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.46 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 62 pf
   Статический коэффициент передачи тока (hfe): 150
   Корпус транзистора: SOT23

 Аналоги (замена) для NSS40200LT1G

 

NSS40200LT1G Datasheet (PDF)

 ..1. Size:127K  onsemi
nss40200lt1g.pdfpdf_icon

NSS40200LT1G

NSS40200LT1G, NSV40200LT1G 40 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -40 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable

 5.1. Size:86K  onsemi
nss40200l nsv40200l.pdfpdf_icon

NSS40200LT1G

NSS40200L, NSV40200L 40 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is im

 5.2. Size:126K  onsemi
nss40200l.pdfpdf_icon

NSS40200LT1G

NSS40200LT1G 40 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 7.1. Size:86K  onsemi
nss40201lt1g nsv40201lt1g.pdfpdf_icon

NSS40200LT1G

NSS40201LT1G, NSV40201LT1G 40 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 40 VOLTS, 2.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) TRA

Другие транзисторы... NJW44H11G , NJVNJD1718T4G , NSS20300MR6 , NSS20500UW3T2G , NSS20500UW3TBG , NSS20501UW3T2G , NSS20501UW3TBG , NSS20601CF8T1G , 13007 , NSS40201LT1G , NSS40300DDR2G , NSS40300MDR2G , NJVMJD112G , NJVMJD112T4G , NJVMJD117T4G , NJVMJD122T4G , NJVMJD127T4G .

History: 2N6578 | 2SC1948

 

 
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