NJVMJD122T4G - Даташиты. Аналоги. Основные параметры

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements

MJD128T4G, NJVMJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. SILICON Features POWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc 8 AMPERES Epo

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 2 AMPERES Lead Formed for Surface Mount Applications in Plas

MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. Features POWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A 4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @