NJVMJD41CT4G. Аналоги и основные параметры

Наименование производителя: NJVMJD41CT4G

Маркировка: J41C

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 20 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 3 MHz

Статический коэффициент передачи тока (hFE): 15

Корпус транзистора: TO252

 Аналоги (замена) для NJVMJD41CT4G

- подборⓘ биполярного транзистора по параметрам

 

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ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NJVMJD31CRLG, NJVMJD31CT4G, NJVMJD31T4G, NJVMJD32CG, NJVMJD32CT4G, NJVMJD32T4G, NJVMJD340T4G, NJVMJD350T4G, 2SA1837, NJVMJD42CRLG, NJVMJD42CT4G, NJVMJD44E3T4G, NJVMJD44H11G, NJVMJD44H11RLG, NJVMJD44H11T4G, NJVMJD45H11G, NJVMJD45H11RLG