Справочник транзисторов. NJVMJD44H11T4G

 

Биполярный транзистор NJVMJD44H11T4G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NJVMJD44H11T4G
   Маркировка: J44H11
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 85 MHz
   Ёмкость коллекторного перехода (Cc): 45 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO252

 Аналоги (замена) для NJVMJD44H11T4G

 

 

NJVMJD44H11T4G Datasheet (PDF)

 3.1. Size:148K  onsemi
njvmjd44h11 njvmjd45h11.pdf

NJVMJD44H11T4G
NJVMJD44H11T4G

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.1. Size:115K  onsemi
njvmjd44e3.pdf

NJVMJD44H11T4G
NJVMJD44H11T4G

MJD44E3,NJVMJD44E3T4GDarlington Power TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching output or driverhttp://onsemi.comstages in applications such as switching regulators, converters, andpower amplifiers.NPN DARLINGTON SILICONFeaturesPOWER TRANSISTORS Electrically Similar to Popular D44E3 Device10 AMPERES High DC Gain

 7.1. Size:79K  onsemi
njvmjd47t4g njvmjd50t4g.pdf

NJVMJD44H11T4G
NJVMJD44H11T4G

MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT

 7.2. Size:173K  onsemi
njvmjd41c njvmjd42c.pdf

NJVMJD44H11T4G
NJVMJD44H11T4G

MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S

 7.3. Size:157K  onsemi
mjd47 njvmjd47t4g mjd50 njvmjd50t4g.pdf

NJVMJD44H11T4G
NJVMJD44H11T4G

MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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