NST3906DXV6T1G - описание и поиск аналогов

 

NST3906DXV6T1G - Аналоги. Основные параметры


   Наименование производителя: NST3906DXV6T1G
   Маркировка: A2
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.36 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT563

 Аналоги (замена) для NST3906DXV6T1G

   - подбор ⓘ биполярного транзистора по параметрам

 

NST3906DXV6T1G - технические параметры

 ..1. Size:96K  onsemi
 nst3906dxv6t1g.pdf pdf_icon

NST3906DXV6T1G

NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power

 1.1. Size:172K  onsemi
 nst3906dxv6t1 nst3906dxv6t5.pdf pdf_icon

NST3906DXV6T1G

NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power

 1.2. Size:96K  onsemi
 nst3906dxv6t1-5.pdf pdf_icon

NST3906DXV6T1G

NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power

 6.1. Size:96K  onsemi
 nst3906dp6.pdf pdf_icon

NST3906DXV6T1G

NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat

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