NSBA143EDP6T5G. Аналоги и основные параметры

Наименование производителя: NSBA143EDP6T5G

Маркировка: F

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 4.7 kOhm

Встроенный резистор цепи смещения R2 = 4.7 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.27 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 15

Корпус транзистора: SOT963

 Аналоги (замена) для NSBA143EDP6T5G

- подборⓘ биполярного транзистора по параметрам

 

NSBA143EDP6T5G даташит

 3.1. Size:127K  onsemi
nsba143edp6.pdfpdf_icon

NSBA143EDP6T5G

MUN5132DW1, NSBA143EDXV6, NSBA143EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 4.7 kW, R2 = 4.7 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor w

 5.1. Size:127K  onsemi
nsba143edxv6.pdfpdf_icon

NSBA143EDP6T5G

MUN5132DW1, NSBA143EDXV6, NSBA143EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 4.7 kW, R2 = 4.7 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor w

 6.1. Size:396K  onsemi
mun2132 mmun2132l mun5132 dta143ee dta143em3 nsba143ef3.pdfpdf_icon

NSBA143EDP6T5G

MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 4.7 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B

 6.2. Size:155K  onsemi
nsba143ef3.pdfpdf_icon

NSBA143EDP6T5G

MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 4.7 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor

Другие транзисторы: NSBA124EDXV6T1G, NSBA124EF3, NSBA124EF3T5G, NSBA124XDXV6, NSBA124XDXV6T1G, NSBA124XF3, NSBA124XF3T5G, NSBA143EDP6, 2N3906, NSBA143EDXV6, NSBA143EDXV6T1G, NSBA143EF3, NSBA143EF3T5G, NSBA143TDXV6, NSBA143TDXV6T1G, NSBA143TDXV6T5G, NSBA143TF3