Справочник транзисторов. NSBA143EDXV6T1G

 

Биполярный транзистор NSBA143EDXV6T1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NSBA143EDXV6T1G
   Маркировка: 0J
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 4.7 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.36 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: SOT563

 Аналоги (замена) для NSBA143EDXV6T1G

 

 

NSBA143EDXV6T1G Datasheet (PDF)

 2.1. Size:127K  onsemi
 nsba143edxv6.pdf

NSBA143EDXV6T1G NSBA143EDXV6T1G

MUN5132DW1,NSBA143EDXV6,NSBA143EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 4.7 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor w

 5.1. Size:127K  onsemi
 nsba143edp6.pdf

NSBA143EDXV6T1G NSBA143EDXV6T1G

MUN5132DW1,NSBA143EDXV6,NSBA143EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 4.7 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor w

 6.1. Size:396K  onsemi
 mun2132 mmun2132l mun5132 dta143ee dta143em3 nsba143ef3.pdf

NSBA143EDXV6T1G NSBA143EDXV6T1G

MUN2132, MMUN2132L,MUN5132, DTA143EE,DTA143EM3, NSBA143EF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 4.7 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

 6.2. Size:155K  onsemi
 nsba143ef3.pdf

NSBA143EDXV6T1G NSBA143EDXV6T1G

MUN2132, MMUN2132L,MUN5132, DTA143EE,DTA143EM3, NSBA143EF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 4.7 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor

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