NSBA144EDXV6T1G. Аналоги и основные параметры

Наименование производителя: NSBA144EDXV6T1G

Маркировка: 0C

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 47 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT563

 Аналоги (замена) для NSBA144EDXV6T1G

- подборⓘ биполярного транзистора по параметрам

 

NSBA144EDXV6T1G даташит

 5.1. Size:90K  onsemi
 nsba144edp6-edxv6.pdf pdf_icon

NSBA144EDXV6T1G

MUN5113DW1, NSBA144EDXV6, NSBA144EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 47 kW, R2 = 47 kW PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wi

 6.1. Size:119K  onsemi
 nsba144ef3.pdf pdf_icon

NSBA144EDXV6T1G

MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT

 7.1. Size:290K  onsemi
 mun5137dw1 nsba144wdxv6 nsba144wdp6.pdf pdf_icon

NSBA144EDXV6T1G

MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 Dual PNP Bias Resistor Transistors www.onsemi.com R1 = 47 kW, R2 = 22 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a

 7.2. Size:458K  onsemi
 mun2137 mmun2137l mun5137 dta144we dta144wm3 nsba144wf3.pdf pdf_icon

NSBA144EDXV6T1G

MUN2137, MMUN2137L, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 22 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT

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Другие транзисторы: NSBA143ZDP6T5G, NSBA143ZDXV6, NSBA143ZDXV6T1G, NSBA143ZF3, NSBA143ZF3T5G, NSBA144EDP6, NSBA144EDP6T5G, NSBA144EDXV6, BC546, NSBA144EDXV6T5G, NSBA144EF3, NSBA144EF3T5G, NSBA144TF3, NSBA144TF3T5G, NSBA144WDP6, NSBA144WDP6T5G, NSBA144WDXV6