Справочник транзисторов. NSBA144EDXV6T5G

 

Биполярный транзистор NSBA144EDXV6T5G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NSBA144EDXV6T5G
   Маркировка: 0C
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 47 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.36 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT563

 Аналоги (замена) для NSBA144EDXV6T5G

 

 

NSBA144EDXV6T5G Datasheet (PDF)

 5.1. Size:90K  onsemi
nsba144edp6-edxv6.pdf

NSBA144EDXV6T5G
NSBA144EDXV6T5G

MUN5113DW1,NSBA144EDXV6,NSBA144EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1) This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wi

 6.1. Size:119K  onsemi
nsba144ef3.pdf

NSBA144EDXV6T5G
NSBA144EDXV6T5G

MUN2113, MMUN2113L,MUN5113, DTA144EE,DTA144EM3, NSBA144EF3Digital Transistors (BRT)R1 = 47 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

 7.1. Size:290K  onsemi
mun5137dw1 nsba144wdxv6 nsba144wdp6.pdf

NSBA144EDXV6T5G
NSBA144EDXV6T5G

MUN5137DW1,NSBA144WDXV6,NSBA144WDP6Dual PNP Bias ResistorTransistorswww.onsemi.comR1 = 47 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a

 7.2. Size:458K  onsemi
mun2137 mmun2137l mun5137 dta144we dta144wm3 nsba144wf3.pdf

NSBA144EDXV6T5G
NSBA144EDXV6T5G

MUN2137, MMUN2137L,MUN5137, DTA144WE,DTA144WM3, NSBA144WF3Digital Transistors (BRT)R1 = 47 kW, R2 = 22 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

 7.3. Size:150K  onsemi
nsba144tf3.pdf

NSBA144EDXV6T5G
NSBA144EDXV6T5G

MUN2140, MMUN2140L,MUN5140, DTA114TE,DTA144TM3, NSBA144TF3Digital Transistors (BRT)R1 = 47 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

 7.4. Size:117K  onsemi
nsba144wf3.pdf

NSBA144EDXV6T5G
NSBA144EDXV6T5G

MUN2137, MMUN2137L,MUN5137, DTA144WE,DTA144WM3, NSBA144WF3Digital Transistors (BRT)R1 = 47 kW, R2 = 22 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

 7.5. Size:132K  onsemi
nsba144wdp6-wdxv6.pdf

NSBA144EDXV6T5G
NSBA144EDXV6T5G

MUN5137DW1,NSBA144WDXV6,NSBA144WDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

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