NSBA144WF3T5G. Аналоги и основные параметры

Наименование производителя: NSBA144WF3T5G

Маркировка: D

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 47 kOhm

Встроенный резистор цепи смещения R2 = 22 kOhm

Соотношение сопротивлений R1/R2 = 2.1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.3 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT1123-3

 Аналоги (замена) для NSBA144WF3T5G

- подборⓘ биполярного транзистора по параметрам

 

NSBA144WF3T5G даташит

 4.1. Size:458K  onsemi
 mun2137 mmun2137l mun5137 dta144we dta144wm3 nsba144wf3.pdf pdf_icon

NSBA144WF3T5G

MUN2137, MMUN2137L, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 22 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT

 4.2. Size:117K  onsemi
 nsba144wf3.pdf pdf_icon

NSBA144WF3T5G

MUN2137, MMUN2137L, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 22 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT

 6.1. Size:290K  onsemi
 mun5137dw1 nsba144wdxv6 nsba144wdp6.pdf pdf_icon

NSBA144WF3T5G

MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 Dual PNP Bias Resistor Transistors www.onsemi.com R1 = 47 kW, R2 = 22 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a

 6.2. Size:132K  onsemi
 nsba144wdp6-wdxv6.pdf pdf_icon

NSBA144WF3T5G

MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 47 kW, R2 = 22 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSBA144EF3T5G, NSBA144TF3, NSBA144TF3T5G, NSBA144WDP6, NSBA144WDP6T5G, NSBA144WDXV6, NSBA144WDXV6T1G, NSBA144WF3, 8550, NSVMMUN2112LT1G, NSVMMUN2113LT3G, NSVMMUN2131LT1G, NSVMMUN2132LT1G, NSVMMUN2133LT1G, NSVMMUN2135LT1G, NSVMMUN2212LT1G, NSVMMUN2217LT1G