NSVMMUN2113LT3G. Аналоги и основные параметры

Наименование производителя: NSVMMUN2113LT3G

Маркировка: A6C

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 47 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.25 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT23

 Аналоги (замена) для NSVMMUN2113LT3G

- подборⓘ биполярного транзистора по параметрам

 

NSVMMUN2113LT3G даташит

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NSVMMUN2113LT3G

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MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 5.1. Size:117K  onsemi
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MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co

 5.2. Size:215K  onsemi
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MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network SO

ПОКАЗАТЬ ЕЩЁ

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