NSVMMUN2212LT1G. Аналоги и основные параметры

Наименование производителя: NSVMMUN2212LT1G

Маркировка: A8B

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 22 kOhm

Встроенный резистор цепи смещения R2 = 22 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.25 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 60

Корпус транзистора: SOT23

 Аналоги (замена) для NSVMMUN2212LT1G

- подборⓘ биполярного транзистора по параметрам

 

NSVMMUN2212LT1G даташит

 0.1. Size:155K  onsemi
 nsvmmun2212lt1g.pdf pdf_icon

NSVMMUN2212LT1G

MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 4.1. Size:104K  onsemi
 nsvmmun2217lt1g.pdf pdf_icon

NSVMMUN2212LT1G

MMUN2217L, NSVMMUN2217L Digital Transistors (BRT) R1 = 4.7 kW, R2 = 10 kW NPN Transistors with Monolithic Bias http //onsemi.com Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The Bias Resistor COLLECTOR Transistor (BRT) contains a single transistor with a monolithic bias (OUTPU

 5.1. Size:115K  onsemi
 nsvmmun2233lt3g.pdf pdf_icon

NSVMMUN2212LT1G

MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BR

 5.2. Size:155K  onsemi
 nsvmmun2232lt3g.pdf pdf_icon

NSVMMUN2212LT1G

MUN2232, MMUN2232L, MUN5232, DTC143EE, DTC143EM3, NSBC143EF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 4.7 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor

ПОКАЗАТЬ ЕЩЁ

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