NSVMMUN2230LT1G. Аналоги и основные параметры

Наименование производителя: NSVMMUN2230LT1G

Маркировка: A8G

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 1 kOhm

Встроенный резистор цепи смещения R2 = 1 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.25 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 3

Корпус транзистора: SOT23

 Аналоги (замена) для NSVMMUN2230LT1G

- подборⓘ биполярного транзистора по параметрам

 

NSVMMUN2230LT1G даташит

 0.1. Size:110K  onsemi
nsvmmun2230lt1g.pdfpdf_icon

NSVMMUN2230LT1G

MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 4.1. Size:115K  onsemi
nsvmmun2233lt3g.pdfpdf_icon

NSVMMUN2230LT1G

MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BR

 4.2. Size:155K  onsemi
nsvmmun2232lt3g.pdfpdf_icon

NSVMMUN2230LT1G

MUN2232, MMUN2232L, MUN5232, DTC143EE, DTC143EM3, NSBC143EF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 4.7 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor

 4.3. Size:156K  onsemi
nsvmmun2235lt1g.pdfpdf_icon

NSVMMUN2230LT1G

MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT)

Другие транзисторы: NSVMMUN2112LT1G, NSVMMUN2113LT3G, NSVMMUN2131LT1G, NSVMMUN2132LT1G, NSVMMUN2133LT1G, NSVMMUN2135LT1G, NSVMMUN2212LT1G, NSVMMUN2217LT1G, D880, NSVMMUN2232LT1G, NSVMMUN2232LT3G, NSVMMUN2233LT3G, NSVMMUN2235LT1G, NSS12500UW3T2G, NSS12501UW3T2G, NSS12601CF8T1G, NSS1C200MZ4T1G