Справочник транзисторов. NSVMMUN2232LT1G

 

Биполярный транзистор NSVMMUN2232LT1G Даташит. Аналоги


   Наименование производителя: NSVMMUN2232LT1G
   Маркировка: A8J
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 4.7 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: SOT23
 

 Аналог (замена) для NSVMMUN2232LT1G

   - подбор ⓘ биполярного транзистора по параметрам

 

NSVMMUN2232LT1G Datasheet (PDF)

 0.1. Size:214K  onsemi
nsvmmun2232lt1g.pdfpdf_icon

NSVMMUN2232LT1G

MMUN2211LT1G Series,SMMUN2211LT1G Series,NSVMMUN2232LT1GBias Resistor TransistorNPN Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The BRT (Bias Resistor COLLECTORR1 (OUTPUT)Transistor) contains a single transistor

 1.1. Size:155K  onsemi
nsvmmun2232lt3g.pdfpdf_icon

NSVMMUN2232LT1G

MUN2232, MMUN2232L,MUN5232, DTC143EE,DTC143EM3, NSBC143EF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 4.7 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor

 4.1. Size:115K  onsemi
nsvmmun2233lt3g.pdfpdf_icon

NSVMMUN2232LT1G

MUN2233, MMUN2233L,MUN5233, DTC143ZE,DTC143ZM3, NSBC143ZF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BR

 4.2. Size:110K  onsemi
nsvmmun2230lt1g.pdfpdf_icon

NSVMMUN2232LT1G

MUN2230, MMUN2230L,MUN5230, DTC113EE,DTC113EM3, NSBC113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias ResistorR1BASETransistor (BRT)

Другие транзисторы... NSVMMUN2113LT3G , NSVMMUN2131LT1G , NSVMMUN2132LT1G , NSVMMUN2133LT1G , NSVMMUN2135LT1G , NSVMMUN2212LT1G , NSVMMUN2217LT1G , NSVMMUN2230LT1G , S9013 , NSVMMUN2232LT3G , NSVMMUN2233LT3G , NSVMMUN2235LT1G , NSS12500UW3T2G , NSS12501UW3T2G , NSS12601CF8T1G , NSS1C200MZ4T1G , NSS1C200MZ4T3G .

History: 2SC3695 | FCX491A | TP3250 | MPS4146 | 2SC5587

 

 
Back to Top

 


 
.