Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR 2N 697TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCERCollector Emitter Voltage 40 VVCBOCollector Base Voltage 60 VVEBOEmitter Base Voltage 5VPDPower Dissipation @ Ta=25C 600

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W APT @ T = 250C (2) 2.0 W C0Operating & Storage Juncti

2N6975, 2N6976,S E M I C O N D U C T O R2N6977, 2N69785A, 400V and 500V N-Channel IGBTsApril 1995April 1995Features PackageJEDEC TO-204AA 5A, 400V and 500VBOTTOM VIEW VCE(ON) 2VCOLLECTOREMITTER(FLANGE) TFI 1s, 0.5s Low On-State VoltageGATE Fast Switching Speeds High Input ImpedanceTerminal DiagramApplicationsN-CHANNEL ENHANCEMENT M