NSS12601CF8T1G - описание и поиск аналогов

 

NSS12601CF8T1G - Аналоги. Основные параметры


   Наименование производителя: NSS12601CF8T1G
   Маркировка: VF
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1.4 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 12 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Ёмкость коллекторного перехода (Cc): 200 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: DFN3X2

 Аналоги (замена) для NSS12601CF8T1G

   - подбор ⓘ биполярного транзистора по параметрам

 

NSS12601CF8T1G - технические параметры

 ..1. Size:659K  onsemi
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NSS12601CF8T1G

NSS12601CF8T1G 12 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 3.1. Size:83K  onsemi
nss12601cf8-d.pdfpdf_icon

NSS12601CF8T1G

NSS12601CF8T1G 12 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 7.1. Size:106K  onsemi
nss12600cf8.pdfpdf_icon

NSS12601CF8T1G

NSS12600CF8T1G 12 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. http //onsem

 9.1. Size:108K  onsemi
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NSS12601CF8T1G

NSS12500UW3T2G 12 V, 8.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor

Другие транзисторы... NSVMMUN2217LT1G , NSVMMUN2230LT1G , NSVMMUN2232LT1G , NSVMMUN2232LT3G , NSVMMUN2233LT3G , NSVMMUN2235LT1G , NSS12500UW3T2G , NSS12501UW3T2G , D965 , NSS1C200MZ4T1G , NSS1C200MZ4T3G , NSS1C201L , NSS1C201MZ4 , NSS1C201MZ4T3G , NSS1C300E , NSS1C300ET4G , NSS1C301E .

History: TPCP8602 | 2SA1359O

 

 
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