NSVMMBT2222ATT1G. Аналоги и основные параметры

Наименование производителя: NSVMMBT2222ATT1G

Маркировка: 1P

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 75 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 300 MHz

Ёмкость коллекторного перехода (Cc): 8 pf

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SOT416

 Аналоги (замена) для NSVMMBT2222ATT1G

- подборⓘ биполярного транзистора по параметрам

 

NSVMMBT2222ATT1G даташит

 0.1. Size:123K  onsemi
 nsvmmbt2222att1g.pdf pdf_icon

NSVMMBT2222ATT1G

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

 0.2. Size:119K  onsemi
 mmbt2222att1g nsvmmbt2222att1g.pdf pdf_icon

NSVMMBT2222ATT1G

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

 6.1. Size:50K  onsemi
 nsvmmbt2907awt1g.pdf pdf_icon

NSVMMBT2222ATT1G

MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. COLLECTOR Features 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Re

 6.2. Size:67K  onsemi
 mmbt2907awt1g nsvmmbt2907awt1g.pdf pdf_icon

NSVMMBT2222ATT1G

MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. COLLECTOR Features 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requ

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSS1C200MZ4T3G, NSS1C201L, NSS1C201MZ4, NSS1C201MZ4T3G, NSS1C300E, NSS1C300ET4G, NSS1C301E, NSS1C301ET4G, BC547B, NSVMMBT2907AWT1G, NSVMMBT5087LT1G, NSVMMBT5087LT3G, NSVMMBT5088LT3G, NSVMMBT5401LT3G, NSVMMBT5401WT1G, NSVMMBT589LT1G, NSVMMBT6429LT1G