NSVDTA143ZET1G. Аналоги и основные параметры

Наименование производителя: NSVDTA143ZET1G

Маркировка: 6K

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 4.7 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 0.1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT416

 Аналоги (замена) для NSVDTA143ZET1G

- подборⓘ биполярного транзистора по параметрам

 

NSVDTA143ZET1G даташит

 ..1. Size:157K  onsemi
nsvdta143zet1g.pdfpdf_icon

NSVDTA143ZET1G

MUN2133, MMUN2133L, MUN5133, DTA143ZE, DTA143ZM3, NSBA143ZF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 47 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor

 6.1. Size:119K  onsemi
nsvdta144eet1g.pdfpdf_icon

NSVDTA143ZET1G

MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT

 6.2. Size:117K  onsemi
nsvdta144wet1g.pdfpdf_icon

NSVDTA143ZET1G

MUN2137, MMUN2137L, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 22 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT

 7.1. Size:110K  onsemi
nsvdta113em3t5g.pdfpdf_icon

NSVDTA143ZET1G

MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

Другие транзисторы: NSVMMBT6520LT1G, NSVMMBTA05LT1G, NSVMMBTH10LT1G, NSVDTA113EM3T5G, NSVDTA114EET1G, NSVDTA114EM3T5G, NSVDTA115EET1G, NSVDTA123EM3T5G, BC547, NSVDTA144EET1G, NSVDTA144WET1G, NSVDTC113EM3T5G, NSVDTC114YM3T5G, NSVDTC123EM3T5G, NSVDTC143ZET1G, NSVDTC143ZM3T5G, NSVDTC144EM3T5G