NSVDTC113EM3T5G. Аналоги и основные параметры

Наименование производителя: NSVDTC113EM3T5G

Маркировка: 7A

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 1 kOhm

Встроенный резистор цепи смещения R2 = 1 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.26 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 3

Корпус транзистора: SOT723

 Аналоги (замена) для NSVDTC113EM3T5G

- подборⓘ биполярного транзистора по параметрам

 

NSVDTC113EM3T5G даташит

 0.1. Size:110K  onsemi
 nsvdtc113em3t5g.pdf pdf_icon

NSVDTC113EM3T5G

MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 6.1. Size:156K  onsemi
 nsvdtc114ym3t5g.pdf pdf_icon

NSVDTC113EM3T5G

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 7.1. Size:156K  onsemi
 nsvdtc144wet1g.pdf pdf_icon

NSVDTC113EM3T5G

MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 22 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 7.2. Size:109K  onsemi
 nsvdtc123em3t5g.pdf pdf_icon

NSVDTC113EM3T5G

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSVDTA113EM3T5G, NSVDTA114EET1G, NSVDTA114EM3T5G, NSVDTA115EET1G, NSVDTA123EM3T5G, NSVDTA143ZET1G, NSVDTA144EET1G, NSVDTA144WET1G, BD139, NSVDTC114YM3T5G, NSVDTC123EM3T5G, NSVDTC143ZET1G, NSVDTC143ZM3T5G, NSVDTC144EM3T5G, NSVDTC144TM3T5G, NSVDTC144WET1G, NSBC113EDXV6