Справочник транзисторов. NSBC113EDXV6T1G

 

Биполярный транзистор NSBC113EDXV6T1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NSBC113EDXV6T1G
   Маркировка: 7G
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 1 kOhm
   Встроенный резистор цепи смещения R2 = 1 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.36 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 3
   Корпус транзистора: SOT563

 Аналоги (замена) для NSBC113EDXV6T1G

 

 

NSBC113EDXV6T1G Datasheet (PDF)

 2.1. Size:131K  onsemi
 nsbc113edxv6.pdf

NSBC113EDXV6T1G NSBC113EDXV6T1G

MUN5230DW1,NSBC113EDXV6Dual NPN Bias ResistorTransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor with a monolithic b

 6.1. Size:77K  onsemi
 mun5330dw1 nsbc113epdxv6.pdf

NSBC113EDXV6T1G NSBC113EDXV6T1G

MUN5330DW1,NSBC113EPDXV6Complementary BiasResistor TransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monoli

 6.2. Size:110K  onsemi
 nsbc113ef3.pdf

NSBC113EDXV6T1G NSBC113EDXV6T1G

MUN2230, MMUN2230L,MUN5230, DTC113EE,DTC113EM3, NSBC113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias ResistorR1BASETransistor (BRT)

 6.3. Size:82K  onsemi
 nsbc113epdxv6.pdf

NSBC113EDXV6T1G NSBC113EDXV6T1G

MUN5330DW1,NSBC113EPDXV6Complementary BiasResistor TransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monoli

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SB806-KR

 

 
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