Справочник транзисторов. NSBC113EF3T5G

 

Биполярный транзистор NSBC113EF3T5G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NSBC113EF3T5G
   Маркировка: D
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 1 kOhm
   Встроенный резистор цепи смещения R2 = 1 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.26 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 3
   Корпус транзистора: SOT1123-3

 Аналоги (замена) для NSBC113EF3T5G

 

 

NSBC113EF3T5G Datasheet (PDF)

 4.1. Size:110K  onsemi
 nsbc113ef3.pdf

NSBC113EF3T5G NSBC113EF3T5G

MUN2230, MMUN2230L,MUN5230, DTC113EE,DTC113EM3, NSBC113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias ResistorR1BASETransistor (BRT)

 6.1. Size:77K  onsemi
 mun5330dw1 nsbc113epdxv6.pdf

NSBC113EF3T5G NSBC113EF3T5G

MUN5330DW1,NSBC113EPDXV6Complementary BiasResistor TransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monoli

 6.2. Size:82K  onsemi
 nsbc113epdxv6.pdf

NSBC113EF3T5G NSBC113EF3T5G

MUN5330DW1,NSBC113EPDXV6Complementary BiasResistor TransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monoli

 6.3. Size:131K  onsemi
 nsbc113edxv6.pdf

NSBC113EF3T5G NSBC113EF3T5G

MUN5230DW1,NSBC113EDXV6Dual NPN Bias ResistorTransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor with a monolithic b

Другие транзисторы... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
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