NSBC114TF3T5G. Аналоги и основные параметры
Наименование производителя: NSBC114TF3T5G
Маркировка: K
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 160
Корпус транзистора: SOT1123-3
Аналоги (замена) для NSBC114TF3T5G
- подборⓘ биполярного транзистора по параметрам
NSBC114TF3T5G даташит
nsbc114tf3.pdf
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 8 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B
nsbc114tdxv6.pdf
MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with
nsbc114tpdxv6.pdf
MUN5315DW1, NSBC114TPDXV6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 8 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol
nsbc114tdp6.pdf
MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with
Другие транзисторы: NSBC114EPDXV6T1G, NSBC114EPDXV6T5G, NSBC114TDP6, NSBC114TDP6T5G, NSBC114TDXV6, NSBC114TDXV6T1G, NSBC114TDXV6T5G, NSBC114TF3, BC327, CPH3244, NSBC114TPDXV6, NSBC114TPDXV6T1G, NSBC114YDP6, NSBC114YDP6T5G, NSBC114YDXV6, NSBC114YDXV6T1G, NSBC114YDXV6T5G
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