NSBC114TPDXV6. Аналоги и основные параметры

Наименование производителя: NSBC114TPDXV6

Маркировка: 15

Тип материала: Si

Полярность: Pre-Biased-NPN*PNP

Встроенный резистор цепи смещения R1 = 10 kOhm

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 160

Корпус транзистора: SOT563

 Аналоги (замена) для NSBC114TPDXV6

- подборⓘ биполярного транзистора по параметрам

 

NSBC114TPDXV6 даташит

 ..1. Size:119K  onsemi
 nsbc114tpdxv6.pdf pdf_icon

NSBC114TPDXV6

MUN5315DW1, NSBC114TPDXV6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 8 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol

 6.1. Size:89K  onsemi
 nsbc114tdxv6.pdf pdf_icon

NSBC114TPDXV6

MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with

 6.2. Size:155K  onsemi
 nsbc114tf3.pdf pdf_icon

NSBC114TPDXV6

MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 8 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B

 6.3. Size:89K  onsemi
 nsbc114tdp6.pdf pdf_icon

NSBC114TPDXV6

MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSBC114TDP6, NSBC114TDP6T5G, NSBC114TDXV6, NSBC114TDXV6T1G, NSBC114TDXV6T5G, NSBC114TF3, NSBC114TF3T5G, CPH3244, S8550, NSBC114TPDXV6T1G, NSBC114YDP6, NSBC114YDP6T5G, NSBC114YDXV6, NSBC114YDXV6T1G, NSBC114YDXV6T5G, NSBC114YF3, NSBC114YF3T5G