Биполярный транзистор NSBC114YPDXV6T1G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: NSBC114YPDXV6T1G
Маркировка: 14
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.21
Максимальная рассеиваемая мощность (Pc): 0.36
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора:
SOT563
Аналоги (замена) для NSBC114YPDXV6T1G
NSBC114YPDXV6T1G
Datasheet (PDF)
1.1. Size:103K onsemi
nsbc114ypdxv6.pdf 
MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single
4.1. Size:103K onsemi
nsbc114ypdp6.pdf 
MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single
6.1. Size:90K onsemi
nsbc114ydp6.pdf 
MUN5214DW1,NSBC114YDXV6,NSBC114YDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
6.2. Size:156K onsemi
nsbc114yf3.pdf 
MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
6.3. Size:135K onsemi
mun2214 mmun2214l mun5214 dtc114ye dtc114ym3 nsbc114yf3.pdf 
MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT
6.4. Size:90K onsemi
nsbc114ydxv6.pdf 
MUN5214DW1,NSBC114YDXV6,NSBC114YDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
