Справочник транзисторов. NSBC114YPDXV6T5G

 

Биполярный транзистор NSBC114YPDXV6T5G Даташит. Аналоги


   Наименование производителя: NSBC114YPDXV6T5G
   Маркировка: 14
   Тип материала: Si
   Полярность: Pre-Biased-NPN*PNP
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.21
   Максимальная рассеиваемая мощность (Pc): 0.36 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT563
 

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NSBC114YPDXV6T5G Datasheet (PDF)

 1.1. Size:103K  onsemi
 nsbc114ypdxv6.pdf pdf_icon

NSBC114YPDXV6T5G

MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 4.1. Size:103K  onsemi
 nsbc114ypdp6.pdf pdf_icon

NSBC114YPDXV6T5G

MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 6.1. Size:90K  onsemi
 nsbc114ydp6.pdf pdf_icon

NSBC114YPDXV6T5G

MUN5214DW1,NSBC114YDXV6,NSBC114YDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 6.2. Size:156K  onsemi
 nsbc114yf3.pdf pdf_icon

NSBC114YPDXV6T5G

MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

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Другие транзисторы... NSBC114YDXV6T1G , NSBC114YDXV6T5G , NSBC114YF3 , NSBC114YF3T5G , NSBC114YPDP6 , NSBC114YPDP6T5G , NSBC114YPDXV6 , NSBC114YPDXV6T1G , 2SD2499 , NSBC115EDXV6 , NSBC115EDXV6T1G , NSBC115TDP6 , NSBC115TDP6T5G , NSBC115TF3 , NSBC115TF3T5G , NSBC115TPDP6 , NSBC115TPDP6T5G .

History: RT1N136M | 3DG2668 | DDC114YH | CN651 | EN916 | AD469

 

 
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