NSVBCX17LT1G. Аналоги и основные параметры

Наименование производителя: NSVBCX17LT1G

Маркировка: T1

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.225 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SOT23

 Аналоги (замена) для NSVBCX17LT1G

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NSVBCX17LT1G даташит

 ..1. Size:61K  onsemi
nsvbcx17lt1g.pdfpdf_icon

NSVBCX17LT1G

BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose http //onsemi.com Transistors Voltage and Current are Negative for PNP Transistors SOT-23 Features (TO-236) CASE 318-08 S and NSV Prefix for Automotive and Other Applications Requiring STYLE 6 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable PNP NPN These Device

 9.1. Size:69K  onsemi
nsvbcp53-16t3g.pdfpdf_icon

NSVBCX17LT1G

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http //onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

 9.2. Size:111K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdfpdf_icon

NSVBCX17LT1G

BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-

 9.3. Size:204K  onsemi
bch807-16l bch807-25l bch807-40l nsvbch807-16l nsvbch807-25l nsvbch807-40l.pdfpdf_icon

NSVBCX17LT1G

General Purpose Transistors PNP Silicon BCH807-16L/25L/40L, NSVBCH807-16L/25L/40L www.onsemi.com Features 175 C TJ(max) - Rated for High Temperature, Mission Critical COLLECTOR Applications 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Devices are Pb-Free, Ha

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