NSBC123EPDXV6. Аналоги и основные параметры

Наименование производителя: NSBC123EPDXV6

Маркировка: 31

Тип материала: Si

Полярность: Pre-Biased-NPN*PNP

Встроенный резистор цепи смещения R1 = 2.2 kOhm

Встроенный резистор цепи смещения R2 = 2.2 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 8

Корпус транзистора: SOT563

 Аналоги (замена) для NSBC123EPDXV6

- подборⓘ биполярного транзистора по параметрам

 

NSBC123EPDXV6 даташит

 ..1. Size:80K  onsemi
 nsbc123epdxv6.pdf pdf_icon

NSBC123EPDXV6

MUN5331DW1, NSBC123EPDXV6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mo

 6.1. Size:109K  onsemi
 nsbc123ef3.pdf pdf_icon

NSBC123EPDXV6

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c

 6.2. Size:389K  onsemi
 mun2231 mmun2231l mun5231 dtc123ee dtc123em3 nsbc123ef3.pdf pdf_icon

NSBC123EPDXV6

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c

 6.3. Size:131K  onsemi
 nsbc123edxv6.pdf pdf_icon

NSBC123EPDXV6

MUN5231DW1, NSBC123EDXV6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolith

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSVEMC2DXV5T1G, NSVEMD4DXV6T5G, NSVEMX1DXV6T1G, NSVMBT3904DW1T3G, NSBC123EDXV6, NSBC123EDXV6T1G, NSBC123EF3, NSBC123EF3T5G, NJW0281G, NSBC123EPDXV6T1G, NSBC123JDP6, NSBC123JDP6T5G, NSBC123JDXV6, NSBC123JDXV6T1G, NSBC123JDXV6T5G, NSBC123JF3, NSBC123JF3T5G