Справочник транзисторов. NSBC123JDP6T5G

 

Биполярный транзистор NSBC123JDP6T5G Даташит. Аналоги


   Наименование производителя: NSBC123JDP6T5G
   Маркировка: D
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.047
   Максимальная рассеиваемая мощность (Pc): 0.27 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT963
 

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NSBC123JDP6T5G Datasheet (PDF)

 3.1. Size:128K  onsemi
 nsbc123jdp6.pdf pdf_icon

NSBC123JDP6T5G

MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi

 5.1. Size:127K  onsemi
 nsbc123jdxv6.pdf pdf_icon

NSBC123JDP6T5G

MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi

 6.1. Size:103K  onsemi
 nsbc123jpdxv6.pdf pdf_icon

NSBC123JDP6T5G

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

 6.2. Size:103K  onsemi
 nsbc123jpdp6.pdf pdf_icon

NSBC123JDP6T5G

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

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Другие транзисторы... NSVMBT3904DW1T3G , NSBC123EDXV6 , NSBC123EDXV6T1G , NSBC123EF3 , NSBC123EF3T5G , NSBC123EPDXV6 , NSBC123EPDXV6T1G , NSBC123JDP6 , 2SD669 , NSBC123JDXV6 , NSBC123JDXV6T1G , NSBC123JDXV6T5G , NSBC123JF3 , NSBC123JF3T5G , NSBC123JPDP6 , NSBC123JPDP6T5G , NSBC123JPDXV6 .

History: 2SD2589P | 2SA1789 | CSC3199

 

 
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