Справочник транзисторов. NSBC123JF3

 

Биполярный транзистор NSBC123JF3 Даташит. Аналоги


   Наименование производителя: NSBC123JF3
   Маркировка: V
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.047
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT1123-3
 

 Аналог (замена) для NSBC123JF3

   - подбор ⓘ биполярного транзистора по параметрам

 

NSBC123JF3 Datasheet (PDF)

 ..1. Size:156K  onsemi
 nsbc123jf3.pdf pdf_icon

NSBC123JF3

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT)

 0.1. Size:399K  onsemi
 mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf pdf_icon

NSBC123JF3

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co

 6.1. Size:103K  onsemi
 nsbc123jpdxv6.pdf pdf_icon

NSBC123JF3

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

 6.2. Size:103K  onsemi
 nsbc123jpdp6.pdf pdf_icon

NSBC123JF3

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... NSBC123EF3T5G , NSBC123EPDXV6 , NSBC123EPDXV6T1G , NSBC123JDP6 , NSBC123JDP6T5G , NSBC123JDXV6 , NSBC123JDXV6T1G , NSBC123JDXV6T5G , BC639 , NSBC123JF3T5G , NSBC123JPDP6 , NSBC123JPDP6T5G , NSBC123JPDXV6 , NSBC123JPDXV6T1G , NSBC123JPDXV6T5G , NSBC123TDP6 , NSBC123TDP6T5G .

 

 
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