NSBC123JF3T5G. Аналоги и основные параметры

Наименование производителя: NSBC123JF3T5G

Маркировка: V

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 2.2 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 0.047

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.3 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT1123-3

 Аналоги (замена) для NSBC123JF3T5G

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NSBC123JF3T5G даташит

 ..1. Size:399K  onsemi
 mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf pdf_icon

NSBC123JF3T5G

MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co

 4.1. Size:156K  onsemi
 nsbc123jf3.pdf pdf_icon

NSBC123JF3T5G

MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT)

 6.1. Size:103K  onsemi
 nsbc123jpdxv6.pdf pdf_icon

NSBC123JF3T5G

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl

 6.2. Size:103K  onsemi
 nsbc123jpdp6.pdf pdf_icon

NSBC123JF3T5G

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSBC123EPDXV6, NSBC123EPDXV6T1G, NSBC123JDP6, NSBC123JDP6T5G, NSBC123JDXV6, NSBC123JDXV6T1G, NSBC123JDXV6T5G, NSBC123JF3, BC639, NSBC123JPDP6, NSBC123JPDP6T5G, NSBC123JPDXV6, NSBC123JPDXV6T1G, NSBC123JPDXV6T5G, NSBC123TDP6, NSBC123TDP6T5G, NSBC123TF3