NSBC123JPDXV6T5G. Аналоги и основные параметры

Наименование производителя: NSBC123JPDXV6T5G

Маркировка: 35

Тип материала: Si

Полярность: Pre-Biased-NPN*PNP

Встроенный резистор цепи смещения R1 = 2.2 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 0.047

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT563

 Аналоги (замена) для NSBC123JPDXV6T5G

- подборⓘ биполярного транзистора по параметрам

 

NSBC123JPDXV6T5G даташит

 1.1. Size:103K  onsemi
 nsbc123jpdxv6.pdf pdf_icon

NSBC123JPDXV6T5G

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl

 4.1. Size:103K  onsemi
 nsbc123jpdp6.pdf pdf_icon

NSBC123JPDXV6T5G

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl

 6.1. Size:156K  onsemi
 nsbc123jf3.pdf pdf_icon

NSBC123JPDXV6T5G

MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT)

 6.2. Size:127K  onsemi
 nsbc123jdxv6.pdf pdf_icon

NSBC123JPDXV6T5G

MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 2.2 kW, R2 = 47 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wi

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