NSBC123TF3. Аналоги и основные параметры

Наименование производителя: NSBC123TF3

Маркировка: T

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 2.2 kOhm

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.3 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 160

Корпус транзистора: SOT1123-3

 Аналоги (замена) для NSBC123TF3

- подборⓘ биполярного транзистора по параметрам

 

NSBC123TF3 даташит

 ..1. Size:155K  onsemi
nsbc123tf3.pdfpdf_icon

NSBC123TF3

MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3, NSBC123TF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 8 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 6.1. Size:106K  onsemi
nsbc123tpdp6.pdfpdf_icon

NSBC123TF3

NSBC123TPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW NPN and PNP Transistors with Monolithic http //onsemi.com Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias

 6.2. Size:99K  onsemi
nsbc123tdp6.pdfpdf_icon

NSBC123TF3

NSBC123TDP6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW NPN Transistors with Monolithic Bias http //onsemi.com Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias network consis

 7.1. Size:103K  onsemi
nsbc123jpdxv6.pdfpdf_icon

NSBC123TF3

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl

Другие транзисторы: NSBC123JF3T5G, NSBC123JPDP6, NSBC123JPDP6T5G, NSBC123JPDXV6, NSBC123JPDXV6T1G, NSBC123JPDXV6T5G, NSBC123TDP6, NSBC123TDP6T5G, 431, NSBC123TF3T5G, NSBC123TPDP6, NSBC123TPDP6T5G, NSVMUN5131T1G, NSVMUN5135DW1T1G, NSVMUN5137DW1T1G, NSVMUN5211DW1T3G, NSVMUN5212DW1T1G