NSBC123TF3. Аналоги и основные параметры
Наименование производителя: NSBC123TF3
Маркировка: T
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 160
Корпус транзистора: SOT1123-3
Аналоги (замена) для NSBC123TF3
- подборⓘ биполярного транзистора по параметрам
NSBC123TF3 даташит
..1. Size:155K onsemi
nsbc123tf3.pdf 

MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3, NSBC123TF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 8 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
6.1. Size:106K onsemi
nsbc123tpdp6.pdf 

NSBC123TPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW NPN and PNP Transistors with Monolithic http //onsemi.com Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias
6.2. Size:99K onsemi
nsbc123tdp6.pdf 

NSBC123TDP6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW NPN Transistors with Monolithic Bias http //onsemi.com Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias network consis
7.1. Size:103K onsemi
nsbc123jpdxv6.pdf 

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl
7.2. Size:103K onsemi
nsbc123jpdp6.pdf 

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl
7.3. Size:80K onsemi
nsbc123epdxv6.pdf 

MUN5331DW1, NSBC123EPDXV6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mo
7.4. Size:156K onsemi
nsbc123jf3.pdf 

MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT)
7.5. Size:127K onsemi
nsbc123jdxv6.pdf 

MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 2.2 kW, R2 = 47 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wi
7.6. Size:109K onsemi
nsbc123ef3.pdf 

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c
7.7. Size:389K onsemi
mun2231 mmun2231l mun5231 dtc123ee dtc123em3 nsbc123ef3.pdf 

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c
7.8. Size:128K onsemi
nsbc123jdp6.pdf 

MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 2.2 kW, R2 = 47 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wi
7.9. Size:131K onsemi
nsbc123edxv6.pdf 

MUN5231DW1, NSBC123EDXV6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolith
7.10. Size:399K onsemi
mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf 

MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co
Другие транзисторы: NSBC123JF3T5G, NSBC123JPDP6, NSBC123JPDP6T5G, NSBC123JPDXV6, NSBC123JPDXV6T1G, NSBC123JPDXV6T5G, NSBC123TDP6, NSBC123TDP6T5G, 431, NSBC123TF3T5G, NSBC123TPDP6, NSBC123TPDP6T5G, NSVMUN5131T1G, NSVMUN5135DW1T1G, NSVMUN5137DW1T1G, NSVMUN5211DW1T3G, NSVMUN5212DW1T1G