Справочник транзисторов. NSVMUN5212DW1T1G

 

Биполярный транзистор NSVMUN5212DW1T1G Даташит. Аналоги


   Наименование производителя: NSVMUN5212DW1T1G
   Маркировка: 7B
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 22 kOhm
   Встроенный резистор цепи смещения R2 = 22 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.26 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: SOT363
 

 Аналог (замена) для NSVMUN5212DW1T1G

   - подбор ⓘ биполярного транзистора по параметрам

 

NSVMUN5212DW1T1G Datasheet (PDF)

 0.1. Size:191K  onsemi
nsvmun5212dw1t1g.pdfpdf_icon

NSVMUN5212DW1T1G

MUN5211DW1T1G,SMUN5211DW1T1G,NSVMUN5211DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withSOT-363a monolithic bias network consisting of two resistors; a series base CASE 419BSTYLE 1resistor and a base-emitter resistor. The

 5.1. Size:89K  onsemi
nsvmun5215dw1t1g.pdfpdf_icon

NSVMUN5212DW1T1G

MUN5215DW1,NSBC114TDXV6,NSBC114TDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 8 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with

 5.2. Size:89K  onsemi
nsvmun5211dw1t3g.pdfpdf_icon

NSVMUN5212DW1T1G

MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 5.3. Size:90K  onsemi
nsvmun5214dw1t3g.pdfpdf_icon

NSVMUN5212DW1T1G

MUN5214DW1,NSBC114YDXV6,NSBC114YDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

Другие транзисторы... NSBC123TF3 , NSBC123TF3T5G , NSBC123TPDP6 , NSBC123TPDP6T5G , NSVMUN5131T1G , NSVMUN5135DW1T1G , NSVMUN5137DW1T1G , NSVMUN5211DW1T3G , 2N2907 , NSVMUN5213DW1T3G , NSVMUN5214DW1T3G , NSVMUN5215DW1T1G , NSVMUN5233DW1T3G , NSVMUN5236T1G , NSVMUN5111DW1T3G , NSVMUN5113DW1T3G , NSVMUN5312DW1T2G .

History: MN13B | 2SC1809 | BD977 | 2SB319

 

 
Back to Top

 


 
.