Справочник транзисторов. NSVMUN5233DW1T3G

 

Биполярный транзистор NSVMUN5233DW1T3G Даташит. Аналоги


   Наименование производителя: NSVMUN5233DW1T3G
   Маркировка: 7K
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.1
   Максимальная рассеиваемая мощность (Pc): 0.26 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT363
 

 Аналог (замена) для NSVMUN5233DW1T3G

   - подбор ⓘ биполярного транзистора по параметрам

 

NSVMUN5233DW1T3G Datasheet (PDF)

 0.1. Size:123K  onsemi
nsvmun5233dw1t3g.pdfpdf_icon

NSVMUN5233DW1T3G

MUN5233DW1,NSBC143ZDXV6,NSBC143ZDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi

 5.1. Size:140K  onsemi
nsvmun5236t1g.pdfpdf_icon

NSVMUN5233DW1T3G

MUN2236, MMUN2236L,MUN5236, DTC115EE,DTC115EM3Digital Transistors (BRT)R1 = 100 kW, R2 = 100 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)device and its external resistor bias network. The Bias Resistor PIN 1R1BASETransistor (BRT) conta

 6.1. Size:89K  onsemi
nsvmun5215dw1t1g.pdfpdf_icon

NSVMUN5233DW1T3G

MUN5215DW1,NSBC114TDXV6,NSBC114TDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 8 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with

 6.2. Size:191K  onsemi
nsvmun5212dw1t1g.pdfpdf_icon

NSVMUN5233DW1T3G

MUN5211DW1T1G,SMUN5211DW1T1G,NSVMUN5211DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withSOT-363a monolithic bias network consisting of two resistors; a series base CASE 419BSTYLE 1resistor and a base-emitter resistor. The

Другие транзисторы... NSVMUN5131T1G , NSVMUN5135DW1T1G , NSVMUN5137DW1T1G , NSVMUN5211DW1T3G , NSVMUN5212DW1T1G , NSVMUN5213DW1T3G , NSVMUN5214DW1T3G , NSVMUN5215DW1T1G , 2SC5200 , NSVMUN5236T1G , NSVMUN5111DW1T3G , NSVMUN5113DW1T3G , NSVMUN5312DW1T2G , NSVMUN5312DW1T3G , NSVMUN5314DW1T3G , NSVMUN5316DW1T1G , NSVMUN5331DW1T1G .

History: NB221EX | BCW61FF | 2SA500

 

 
Back to Top

 


 
.