NSVMUN5332DW1T1G. Аналоги и основные параметры

Наименование производителя: NSVMUN5332DW1T1G

Маркировка: 32

Тип материала: Si

Полярность: Pre-Biased-NPN*PNP

Встроенный резистор цепи смещения R1 = 4.7 kOhm

Встроенный резистор цепи смещения R2 = 4.7 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.26 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 15

Корпус транзистора: SOT363

 Аналоги (замена) для NSVMUN5332DW1T1G

- подборⓘ биполярного транзистора по параметрам

 

NSVMUN5332DW1T1G даташит

 0.1. Size:277K  onsemi
nsvmun5332dw1t1g.pdfpdf_icon

NSVMUN5332DW1T1G

MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network SOT-363 CASE 419B The Bias Resistor Transistor (BRT) contains a single transistor with STYLE 1 a monolithic bias network consisting of two resistors; a series base resistor and

 5.1. Size:277K  onsemi
nsvmun5333dw1t1g.pdfpdf_icon

NSVMUN5332DW1T1G

MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network SOT-363 CASE 419B The Bias Resistor Transistor (BRT) contains a single transistor with STYLE 1 a monolithic bias network consisting of two resistors; a series base resistor and

 5.2. Size:277K  onsemi
nsvmun5334dw1t1g.pdfpdf_icon

NSVMUN5332DW1T1G

MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network SOT-363 CASE 419B The Bias Resistor Transistor (BRT) contains a single transistor with STYLE 1 a monolithic bias network consisting of two resistors; a series base resistor and

 5.3. Size:80K  onsemi
nsvmun5331dw1t1g.pdfpdf_icon

NSVMUN5332DW1T1G

MUN5331DW1, NSBC123EPDXV6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mo

Другие транзисторы: NSVMUN5236T1G, NSVMUN5111DW1T3G, NSVMUN5113DW1T3G, NSVMUN5312DW1T2G, NSVMUN5312DW1T3G, NSVMUN5314DW1T3G, NSVMUN5316DW1T1G, NSVMUN5331DW1T1G, C1815, NSVMUN5333DW1T1G, NSVMUN5333DW1T3G, NSVMUN5334DW1T1G, NSVPZTA92T1G, NSVBCP53-16T3G, NSVBCP56-10T3G, NSVBCP69T1G, NSVBCW32LT1G