Справочник транзисторов. NSVMUN5333DW1T3G

 

Биполярный транзистор NSVMUN5333DW1T3G Даташит. Аналоги


   Наименование производителя: NSVMUN5333DW1T3G
   Маркировка: 33
   Тип материала: Si
   Полярность: Pre-Biased-NPN*PNP
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.1
   Максимальная рассеиваемая мощность (Pc): 0.26 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT363
 

 Аналог (замена) для NSVMUN5333DW1T3G

   - подбор ⓘ биполярного транзистора по параметрам

 

NSVMUN5333DW1T3G Datasheet (PDF)

 0.1. Size:277K  onsemi
nsvmun5333dw1t1g.pdfpdf_icon

NSVMUN5333DW1T3G

MUN5311DW1T1G,SMUN5311DW1T1G,NSVMUN5311DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comhttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkSOT-363CASE 419BThe Bias Resistor Transistor (BRT) contains a single transistor withSTYLE 1a monolithic bias network consisting of two resistors; a series baseresistor and

 5.1. Size:277K  onsemi
nsvmun5332dw1t1g.pdfpdf_icon

NSVMUN5333DW1T3G

MUN5311DW1T1G,SMUN5311DW1T1G,NSVMUN5311DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comhttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkSOT-363CASE 419BThe Bias Resistor Transistor (BRT) contains a single transistor withSTYLE 1a monolithic bias network consisting of two resistors; a series baseresistor and

 5.2. Size:277K  onsemi
nsvmun5334dw1t1g.pdfpdf_icon

NSVMUN5333DW1T3G

MUN5311DW1T1G,SMUN5311DW1T1G,NSVMUN5311DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comhttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkSOT-363CASE 419BThe Bias Resistor Transistor (BRT) contains a single transistor withSTYLE 1a monolithic bias network consisting of two resistors; a series baseresistor and

 5.3. Size:80K  onsemi
nsvmun5331dw1t1g.pdfpdf_icon

NSVMUN5333DW1T3G

MUN5331DW1,NSBC123EPDXV6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 2.2 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a mo

Другие транзисторы... NSVMUN5113DW1T3G , NSVMUN5312DW1T2G , NSVMUN5312DW1T3G , NSVMUN5314DW1T3G , NSVMUN5316DW1T1G , NSVMUN5331DW1T1G , NSVMUN5332DW1T1G , NSVMUN5333DW1T1G , C5198 , NSVMUN5334DW1T1G , NSVPZTA92T1G , NSVBCP53-16T3G , NSVBCP56-10T3G , NSVBCP69T1G , NSVBCW32LT1G , NSVBCW68GLT1G , NSVMSD42WT1G .

History: BC850AR | KSC2752N | 2SC2668R | CL152-3A | UMT1203 | SC258 | MA393E

 

 
Back to Top

 


 
.