Биполярный транзистор NSVBCP53-16T3G Даташит. Аналоги
Наименование производителя: NSVBCP53-16T3G
Маркировка: AH-16
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT223
Аналог (замена) для NSVBCP53-16T3G
NSVBCP53-16T3G Datasheet (PDF)
nsvbcp53-16t3g.pdf

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow
bcp53t1g bcp53-16t1g bcp53-10t1g bcp53-16t3g sbcp53-16t1g sbcp53-10t1g sbcp53-10t1g nsvbcp53-16t3g.pdf

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.
nsvbcp56-10t3g.pdf

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder
bcp69t1g nsvbcp69t1g.pdf

BCP69T1G, NSVBCP69T1GPNP SiliconEpitaxial TransistorThis PNP Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER High Current: IC = -1.0 APNP SILICON The SOT-223 Package Can Be Soldered
Другие транзисторы... NSVMUN5314DW1T3G , NSVMUN5316DW1T1G , NSVMUN5331DW1T1G , NSVMUN5332DW1T1G , NSVMUN5333DW1T1G , NSVMUN5333DW1T3G , NSVMUN5334DW1T1G , NSVPZTA92T1G , 13007 , NSVBCP56-10T3G , NSVBCP69T1G , NSVBCW32LT1G , NSVBCW68GLT1G , NSVMSD42WT1G , NSVMUN2112T1G , NSVMUN2212T1G , NSVMUN2233T1G .
History: DP0150ADJ
History: DP0150ADJ



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