Справочник транзисторов. NSVBC847BTT1G

 

Биполярный транзистор NSVBC847BTT1G Даташит. Аналоги


   Наименование производителя: NSVBC847BTT1G
   Маркировка: 1F
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT416
 

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NSVBC847BTT1G Datasheet (PDF)

 ..1. Size:64K  onsemi
nsvbc847btt1g.pdfpdf_icon

NSVBC847BTT1G

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 NSV Prefix for Automotive and Other Applications Requiring BASEUnique Site and Control

 5.1. Size:111K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdfpdf_icon

NSVBC847BTT1G

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 5.2. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g nsvbc849blt1g bc849clt1g bc849clt3g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdfpdf_icon

NSVBC847BTT1G

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 5.3. Size:144K  onsemi
nsvbc847bdw1t2g.pdfpdf_icon

NSVBC847BTT1G

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

Другие транзисторы... NSV60601MZ4T1G , NSV60601MZ4T3G , NSV9435T1G , NSVBC817-16LT1G , NSVBC818-40LT1G , NSVBC846BM3T5G , NSVBC847BDW1T2G , NSVBC847BLT3G , MJE340 , NSVBC848BWT1G , NSVBC848CDW1T1G , NSVBC848CLT1G , NSVBC850BLT1G , NSVBC850CLT1G , NSVBC857BLT3G , NSVBC857BTT1G , NSVBC857CWT1G .

History: P209A | BD213-80 | KRA561U | DC5422 | HD2F2Q | BC856U | NSV60601MZ4T1G

 

 
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