Справочник транзисторов. NSVBC848BWT1G

 

Биполярный транзистор NSVBC848BWT1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NSVBC848BWT1G
   Маркировка: 1K
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT323

 Аналоги (замена) для NSVBC848BWT1G

 

 

NSVBC848BWT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
nsvbc848bwt1g.pdf

NSVBC848BWT1G
NSVBC848BWT1G

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 6.1. Size:116K  onsemi
nsvbc848clt1g.pdf

NSVBC848BWT1G
NSVBC848BWT1G

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 6.2. Size:110K  onsemi
nsvbc848cdw1t1g.pdf

NSVBC848BWT1G
NSVBC848BWT1G

BC846BDW1, BC847BDW1,BC848CDW1Dual General PurposeTransistorsNPN Dualswww.onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Features SOT-363CASE 419B S and NSV Prefixes for Automotive and Other ApplicationsSTYLE 1Requiring Unique Site and

 7.1. Size:111K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

NSVBC848BWT1G
NSVBC848BWT1G

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 7.2. Size:100K  onsemi
nsvbc846bm3t5g.pdf

NSVBC848BWT1G
NSVBC848BWT1G

BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI

 7.3. Size:96K  onsemi
bc846bm3t5g nsvbc846bm3t5g.pdf

NSVBC848BWT1G
NSVBC848BWT1G

BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI

 7.4. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g nsvbc849blt1g bc849clt1g bc849clt3g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

NSVBC848BWT1G
NSVBC848BWT1G

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 7.5. Size:64K  onsemi
nsvbc847btt1g.pdf

NSVBC848BWT1G
NSVBC848BWT1G

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 NSV Prefix for Automotive and Other Applications Requiring BASEUnique Site and Control

 7.6. Size:144K  onsemi
nsvbc847bdw1t2g.pdf

NSVBC848BWT1G
NSVBC848BWT1G

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

 7.7. Size:116K  onsemi
nsvbc847blt3g.pdf

NSVBC848BWT1G
NSVBC848BWT1G

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

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