Справочник транзисторов. NSVBC857CWT1G

 

Биполярный транзистор NSVBC857CWT1G Даташит. Аналоги


   Наименование производителя: NSVBC857CWT1G
   Маркировка: 3G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 420
   Корпус транзистора: SOT323
 

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NSVBC857CWT1G Datasheet (PDF)

 ..1. Size:81K  onsemi
nsvbc857cwt1g.pdfpdf_icon

NSVBC857CWT1G

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 6.1. Size:86K  onsemi
nsvbc857blt3g.pdfpdf_icon

NSVBC857CWT1G

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2EMITTERMAXIMUM RATINGS (TA = 25C unless other

 6.2. Size:67K  onsemi
nsvbc857btt1g.pdfpdf_icon

NSVBC857CWT1G

BC857BTT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 which isdesigned for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101Qualifi

 7.1. Size:111K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdfpdf_icon

NSVBC857CWT1G

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

Другие транзисторы... NSVBC847BTT1G , NSVBC848BWT1G , NSVBC848CDW1T1G , NSVBC848CLT1G , NSVBC850BLT1G , NSVBC850CLT1G , NSVBC857BLT3G , NSVBC857BTT1G , 2SC1815 , NSVBC858BLT1G , NSVBC858CLT1G , NSS20101J , NSS20200LT1G , NSS20201LT1G , NSS20201MR6 , NSS40300MZ4T1G , NSS40300MZ4T3G .

History: SD2857 | BU508DR | BDX93 | 2SC2785JF | BLV37 | NSS20101J | FPN660A

 

 
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